Silicon Carbide

Product Property

What is Silicon Carbide? Definition & Core Properties

Silicon Carbide (chemical formula SiC), also known as carborundum, is a synthetic inorganic compound made from silica sand and petroleum coke through high-temperature smelting (2000-2500℃). It exists in hexagonal (α-SiC) and cubic (β-SiC) crystal structures, with unique physical and chemical properties that make it indispensable in high-temperature, high-wear, and high-frequency industrial scenarios. Silicon carbide is pided into refractory grade, industrial grade, and semiconductor grade based on purity, catering to different industry needs.

1. Thermal Properties

Key Parameters: Melting point ~2700℃ (decomposes before melting), thermal conductivity 120-200 W/m·K (25℃), thermal expansion coefficient 4.5×10⁻⁶/℃ (20-1000℃)

Standard: ASTM C469 (thermal conductivity test), ASTM C1171 (thermal shock resistance)

Advantage: Maintains structural stability in extreme high-temperature environments; low thermal expansion reduces cracking risk from temperature swings. For refractory applications, it can withstand continuous high temperatures of 1500-1600℃ in air.

2. Mechanical Properties

Key Parameters: Hardness 9.5 on Mohs scale (second only to diamond), compressive strength ≥2000 MPa, flexural strength ≥400 MPa

Standard: ASTM C133 (compressive strength), ASTM C1161 (flexural strength)

Advantage: Wear resistance 5-10x higher than alumina and high-alumina refractories; suitable for high-abrasion industrial zones such as cement kiln inlets and steel mill chutes.

3. Chemical Properties

Key Features: Resistant to acids (except hydrofluoric acid), alkalis, and molten metals (Al, Cu); oxidation resistance up to 1600℃ in air

Standard: ASTM C724 (chemical corrosion resistance)

Advantage: Stable in harsh chemical environments, avoiding erosion-induced failure. It is widely used in molten metal processing and chemical reactor linings.

4. Electrical Properties (Semiconductor Grade)

Key Parameters: Bandgap 3.26 eV (wider than silicon’s 1.12 eV), breakdown electric field 3 MV/cm, electron mobility 1000 cm²/V·s

Standard: ASTM F2804 (semiconductor-grade SiC wafer testing)

Advantage: Enables high-power, high-frequency, and high-temperature electronic devices with lower energy consumption. Compared with silicon-based devices, SiC devices reduce energy loss by 30-50%.

Key Types of Silicon Carbide (By Grade & Form)

Silicon carbide is classified by purity grade and product form, with each type having unique core indicators and suitable application scenarios. Choosing the right type is critical to ensuring performance and cost-effectiveness.

1. By Purity Grade

① Refractory Grade Silicon Carbide (SiC ≥90-95%)

Core Indicators: Fixed carbon ≥82%, free silica ≤1.5%, apparent porosity ≤18%

Ideal Scenes: Refractory bricks, kiln linings, wear-resistant parts (cement kiln inlet, steel mill chute)

Price Factor: Purity, particle size distribution (PSD)

② Industrial Grade Silicon Carbide (SiC ≥96-98%)

Core Indicators: Low impurity content (Fe₂O₃ ≤0.2%, Al₂O₃ ≤0.3%)

Ideal Scenes: Abrasive tools, cutting blades, thermal spray coatings

③ Semiconductor Grade Silicon Carbide (SiC ≥99.999%)

Core Indicators: Ultra-low defect density (<0.1 cm⁻²), high crystal quality

Ideal Scenes: Power semiconductors, electric vehicles (EVs), 5G base stations

2. By Product Form

① Silicon Carbide Powder (PSD: 0.1-100 μm)

Types: Coarse powder (10-100 μm, refractory use), fine powder (0.1-10 μm, abrasive/ceramic use), ultra-fine powder (<1 μm, semiconductor use)

Application: Raw material for refractories, ceramics, and semiconductor epitaxy

② Silicon Carbide Refractory Products (Bricks, Tiles, Crucibles)

Types: SiC bricks (dense/insulating), SiC tiles, SiC crucibles

Application: Kiln linings, molten metal crucibles, high-temperature furnace parts

③ Silicon Carbide Wafer (2-inch/4-inch/6-inch/8-inch)

Types: N-type/P-type, epitaxial wafer

Application: Power devices (MOSFETs, IGBTs), RF devices

④ Silicon Carbide Composite Materials (SiC-C, SiC-Si₃N₄)

Advantage: Combines SiC’s wear resistance with other materials’ toughness

Application: Aerospace components, high-speed train brake discs

Precise Industry Applications of Silicon Carbide

Silicon carbide is widely used in refractory, semiconductor, new energy, and other industries. The following is a detailed breakdown by "industry + working condition pain points + product type + actual value" to help you match practical needs accurately.

1. Refractory & Kiln Industry

Application Scenes: Cement kiln inlet/outlet, steel mill hot blast furnace linings, glass furnace throat

Working Condition Pain Points: High temperature (1200-1600℃), material abrasion, chemical corrosion

Recommended SiC Type: Refractory-grade SiC bricks/powder (SiC ≥92%)

Actual Value: Extends kiln lining service life by 6-12 months, reduces maintenance frequency by 40%, and lowers annual maintenance costs by $50,000-$100,000 for large cement plants.

2. Steel & Metallurgy Industry

Application Scenes: Slag troughs, tundish nozzles, molten metal crucibles

Working Condition Pain Points: Molten metal erosion, high mechanical wear

Recommended SiC Type: Dense SiC refractory products (apparent porosity ≤12%)

Actual Value: Reduces nozzle clogging, improves casting efficiency by 25%, and reduces molten metal loss by 3-5%.

3. Semiconductor & Power Electronics Industry

Application Scenes: EV powertrains, solar inverters, 5G base station power modules

Working Condition Pain Points: High voltage, high frequency, heat generation

Recommended SiC Type: Semiconductor-grade SiC wafers/epitaxial layers (SiC ≥99.999%)

Actual Value: Reduces device energy consumption by 30-50%, shrinks size by 50%, and extends the service life of EV powertrain components by 2x.

4. Abrasive & Cutting Tool Industry

Application Scenes: Grinding wheels, cutting blades, sandblasting media

Working Condition Pain Points: High wear, precision cutting requirements

Recommended SiC Type: Industrial-grade SiC powder (PSD 1-50 μm)

Actual Value: Cutting efficiency 2x higher than alumina abrasives, tool life 3x longer, and reduces tool replacement frequency by 60%.

5. New Energy & Aerospace Industry

Application Scenes: EV battery thermal management, aerospace engine components

Working Condition Pain Points: Extreme temperature swings, high pressure

Recommended SiC Type: SiC composite materials (SiC-C, SiC-Si₃N₄)

Actual Value: Improves battery thermal stability, withstands engine temperatures up to 1500℃, and reduces the weight of aerospace components by 20-30%.

Our Silicon Carbide Core Advantages (R&D, Production & Service)

We are a professional silicon carbide manufacturer integrating R&D, production, and sales, providing one-stop SiC solutions for global industrial users. Our advantages are supported by data and actual cases to ensure product quality and service reliability.

1. Full-Grade Product Line & Custom Formulations

Advantage: Cover refractory/industrial/semiconductor-grade SiC; support customizing purity (90-99.999%), particle size (0.1 μm-100 μm), and product forms (powder/bricks/wafer) to meet personalized needs of different industries.

Case: Customized SiC refractory bricks (SiC 95%, size 300×150×75mm) for a Chinese cement plant, extending lining life from 8 months to 16 months, reducing maintenance costs by 45%.

2. Advanced Production Technology & Strict Quality Control

Advantage: Adopt Acheson process (for refractory/industrial grade) and physical vapor transport (PVT) method (for semiconductor grade); 12+ quality inspection links (XRF for purity, SEM for particle size, defect detection for wafers) to ensure stable product performance.

Data: Defect rate <0.5% for refractory products; defect density <0.1 cm⁻² for semiconductor wafers (meets ASTM F2804 standard); pass rate of third-party (SGS/BV) testing is 100%.

3. Global Supply Capacity & Fast Delivery

Advantage: 2 production bases (refractory/industrial grade: annual output 50,000 tons; semiconductor grade: 100,000 wafers/year); 5 overseas warehouses (USA, Germany, Japan, India, Brazil) to realize localized delivery.

Data: Standard products delivered in 7-15 days; custom products in 25-45 days; semiconductor wafers in 30-60 days; on-time delivery rate ≥98%.

4. One-Stop Technical Support

Advantage: Provide pre-sales working condition analysis, in-sales product testing, post-sales installation guidance; 10+ senior engineers with 15+ years of SiC industry experience, available for on-site technical support.

Case: Helped a European EV component manufacturer select semiconductor-grade SiC wafers, optimize device design, and reduce device energy consumption by 40%.

How to Choose the Right Silicon Carbide? 4-Step Selection Method

Choosing the right silicon carbide requires combining industry characteristics, working conditions, and performance requirements. The following 4-step method helps you make accurate selections efficiently.

Step 1: Clarify Industry & Application Scenario

• Refractory/Kiln: Prioritize refractory-grade SiC (SiC ≥90-95%), focus on wear/heat resistance and low porosity.

   

• Semiconductor/Power Electronics: Choose semiconductor-grade SiC (SiC ≥99.999%), focus on purity, defect density, and crystal quality.

   

• Abrasive/Tool: Select industrial-grade SiC (SiC ≥96-98%), focus on particle size uniformity and hardness.

   

Step 2: Confirm Key Performance Requirements

• High-Temp Scenes: Ensure thermal shock resistance ≥35 cycles (ASTM C1171), service temperature ≥1500℃.

   

• High-Wear Scenes: Prioritize hardness (Mohs 9.5) and low porosity (<18%) to enhance wear resistance.

   

• Semiconductor Scenes: Verify bandgap (3.26 eV), breakdown electric field (3 MV/cm), and defect density (<0.1 cm⁻²).

   

Step 3: Determine Product Form & Specifications

• Raw Material Use: Silicon carbide powder (PSD matching production process, e.g., coarse powder for refractories, ultra-fine powder for semiconductors).

   

• Lining/Structural Parts: SiC bricks/tiles (custom size per equipment dimensions and installation requirements).

   

• Electronic Devices: SiC wafers (size 4-inch/6-inch/8-inch per device design and production capacity).

   

Step 4: Balance Cost & Performance

• Cost-Sensitive: Refractory-grade SiC (cost-effective for high-volume industrial use, balancing performance and cost).

   

• High-End Demand: Semiconductor-grade SiC (higher cost but brings long-term energy savings and device performance improvement, suitable for high-value applications).

   

Silicon Carbide FAQ & Procurement Guide

Frequently Asked Questions (FAQ)

Q1: What factors affect silicon carbide price?

A: Key factors: Purity (semiconductor-grade is 10-20x more expensive than refractory-grade), product form (wafers > bricks > powder), order quantity (bulk orders get 10-20% discount), delivery terms (EXW < FOB < CIF).

Q2: What is the MOQ for silicon carbide products?

A: Refractory-grade powder/bricks: MOQ 500 kg; industrial-grade powder: MOQ 100 kg; semiconductor-grade wafers: MOQ 10 pieces. Small trial orders are acceptable with a 10-15% premium.

Q3: How to store silicon carbide to avoid quality degradation?

A: Store in dry, well-ventilated areas; avoid moisture (for powder, moisture can cause agglomeration) and heavy impact (for bricks/wafers, which may cause cracks); sealed packaging has a shelf life of 12 months.

Q4: Do you provide quality certification and testing reports?

A: Yes! We provide ASTM/ISO/JIS certification and third-party (SGS/BV) testing reports (purity, performance, defect density) for all products to ensure transparency and reliability.

Procurement Guide

Payment Terms: T/T (30% deposit, 70% against B/L), L/C acceptable for large orders (≥10 tons for refractory grade, ≥100 wafers for semiconductor grade).

Packaging: Powder (25 kg/bag, plastic-woven with inner film, moisture-proof); bricks/tiles (wooden crate, shock-proof); wafers (anti-static vacuum packaging, dust-proof).

Delivery Time: Standard products: 7-15 days; custom products: 25-45 days; semiconductor wafers: 30-60 days.

Quality Assurance: 12-month warranty for refractory/industrial products; 6-month warranty for semiconductor wafers; free replacement for defective products caused by manufacturing issues, and we bear the shipping cost.

Get Free Silicon Carbide Technical Datasheet & Custom Quote

Main CTA: Get Free Silicon Carbide Technical Datasheet & Custom Quote

Fill in the form below with your specific needs, and our professional team will reply within 24 hours to provide a tailored solution.