Oxide-bonded silicon carbide plates are high-performance ceramic plates made by sintering at high temperatures with silicon carbide (SiC) as the main aggregate (content usually ≥ 80%) and an oxide binder.
The production process typically involves raw material mixing, forming (such as isostatic pressing or molding), and high-temperature sintering (1300-1600℃). Some products require the addition of anti-oxidation agents or expansion agents to optimize performance.
(1) High-temperature resistance and thermal stability
(2) Durable and corrosion-resistant
(3) High thermal conductivity and low expansion
(4) High intensity and structural stability
(5) The panel has a high density and does not fall off.
Ceramic industry,Glass industry,Metallurgical industry,machinery manufacturing industry
|
Item |
Unit |
Regular |
Rapid firing |
|
Volume density |
g/cm3 |
2.75 - 2.85 |
2.65 - 2.7 |
|
Open porosity |
% |
<14 |
<14 |
|
Compressive strength |
Mpa |
>90 |
>90 |
|
Modules of rupture |
Mpa |
>45(20℃) |
>45(20℃) |
| Мрa | >56(1300℃) | >56(1300℃) | |
| Coefficient of thermal expansion | K-1* 10-6 |
4.8 |
4.2~4.7 |
|
Load melting temperature (0.3 MPa) |
℃ |
> 1700 |
> 1650 |
|
Working temperature |
℃ | 1450 | 1420 |
|
Thermal conductivity (at 1200°C) |
w/m.k |
14.0 |
14.0 |
|
SIC |
% |
>88 | >87 |
|
Sio |
% |
＜6 | ＜7 |
|
Al20 |
% |
＜2 | ＜2 |
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